26 March 2007 Ultra-low k1 oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method
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Abstract
It was shown previously that the Double Line and Space (L&S) Formation Method (DLFM) is superior to other methods for forming a dense contact hole (C/H) resist pattern by simulation and 0.30 k1 1:1 C/H resist pattern was formed experimentally. In this paper, a through process of C/H formation from resist patterning to metal filling is presented. The square C/Hs transferred to an oxide film from the resist pattern formed by the DLFM could be filled with metal, although the transferred C/Hs had square corners in comparison with the conventional C/H resist patterning. On the other hand, the combination of the DLFM and the 'Pack and Cover Process' makes it possible to form resist random C/Hs on grids. So, the possibility of forming random C/Hs filled with metal is shown. Moreover, the resolution limit of the DLFM is discussed. 0.29 k1 (half pitch 65 nm) and 0.27 k1 (half pitch 56 nm) 1:1 C/H resist pattern could be formed with optimized dipole illumination. So, random C/Hs with k1 below 0.30 are expected to be formed.
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Hiroko Nakamura, Mitsuhiro Omura, Souichi Yamashita, Yasuyuki Taniguchi, Junko Abe, Satoshi Tanaka, Soichi Inoue, "Ultra-low k1 oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method", Proc. SPIE 6520, Optical Microlithography XX, 65201E (26 March 2007); doi: 10.1117/12.709133; https://doi.org/10.1117/12.709133
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