Paper
27 March 2007 High-index fluoride materials for 193-nm immersion lithography
Teruhiko Nawata, Yoji Inui, Isao Masada, Eiichi Nishijima, Toshiro Mabuchi, Naoto Mochizuki, Hiroki Satoh, Tsuguo Fukuda
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Abstract
BaLiF3 single crystal has been studied as the lens material for the candidate of the next generation high index immersion lithography system. Although the refractive index of BaLiF3 is 1.64 at 193nm which is not sufficient for the requirement, other optical properties such as 193nm transparency and laser durability might fulfill the requirement, and intrinsic birefringence is relatively lower than other candidate materials. It is estimated that the cause of scattering in the BaLiF3 crystal is aggregation of excess LiF component. The special annealing process to eliminate excess LiF component was applied to improve the transparency. The internal transparency was improved to more than 97%/cm by optimizing growth conditions and annealing conditions.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teruhiko Nawata, Yoji Inui, Isao Masada, Eiichi Nishijima, Toshiro Mabuchi, Naoto Mochizuki, Hiroki Satoh, and Tsuguo Fukuda "High-index fluoride materials for 193-nm immersion lithography", Proc. SPIE 6520, Optical Microlithography XX, 65201P (27 March 2007); https://doi.org/10.1117/12.711045
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Cited by 5 scholarly publications.
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KEYWORDS
Crystals

Transmittance

Laser induced fluorescence

Annealing

Refractive index

Immersion lithography

Transparency

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