27 March 2007 Performance of a 1.35NA ArF immersion lithography system for 40-nm applications
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Abstract
Water based immersion lithography is now widely recognized a key enabler for continued device shrinks beyond the limits of classical dry lithography. Since 2004, ASML has shipped multiple TWINSCAN immersion systems to IC manufacturers, which have facilitated immersion process integration and optimization. In early 2006, ASML commenced shipment of the first immersion systems for 45nm volume production, featuring an innovative in-line catadioptric lens with a numerical aperture (NA) of 1.2 and a high transmission polarized illumination system. A natural extension of this technology, the XT:1900Gi supports the continued drive for device shrinks that the semiconductor industry demands by offering 40nm half-pitch resolution. This tool features a projection lens based on the already proven in-line catadioptric lens concept but with an enhanced, industry leading NA of 1.35. In this paper, we will discuss the immersion technology challenges and solutions, and present performance data for this latest dual wafer stage TWINSCAN immersion system.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jos de Klerk, Jos de Klerk, Christian Wagner, Christian Wagner, Richard Droste, Richard Droste, Leon Levasier, Leon Levasier, Louis Jorritsma, Louis Jorritsma, Eelco van Setten, Eelco van Setten, Hans Kattouw, Hans Kattouw, Jowan Jacobs, Jowan Jacobs, Tilmann Heil, Tilmann Heil, } "Performance of a 1.35NA ArF immersion lithography system for 40-nm applications", Proc. SPIE 6520, Optical Microlithography XX, 65201Y (27 March 2007); doi: 10.1117/12.712094; https://doi.org/10.1117/12.712094
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