26 March 2007 Double exposure using 193nm negative tone photoresist
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Abstract
Double exposure is one of the promising methods for extending lithographic patterning into the low k1 regime. In this paper, we demonstrate double patterning of k1-effective=0.25 with improved process window using a negative resist. Negative resist (TOK N- series) in combination with a bright field mask is proven to provide a large process window in generating 1:3 = trench:line resist features. By incorporating two etch transfer steps into the hard mask material, frequency doubled patterns could be obtained.
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Ryoung-han Kim, Ryoung-han Kim, Tom Wallow, Tom Wallow, Jongwook Kye, Jongwook Kye, Harry J. Levinson, Harry J. Levinson, Dave White, Dave White, } "Double exposure using 193nm negative tone photoresist", Proc. SPIE 6520, Optical Microlithography XX, 65202M (26 March 2007); doi: 10.1117/12.713209; https://doi.org/10.1117/12.713209
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