27 March 2007 Challenging to meet 1nm iso-dense bias (IDB) by controlling laser spectrum
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Proceedings Volume 6520, Optical Microlithography XX; 65203P (2007); doi: 10.1117/12.712509
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
According to the ITRS Roadmap, for 45nm Node (as 65nm Half Pitch), the requirement of Gate CD Control is defined as 2.6nm. One of the most challenging CD errors is Iso-Dense Bias (IDB). Assuming 40% of CD errors are dominated by IDB, IDB should be less than 1nm. In general, the majority of IDB is due to: primarily, exposure tool- related factors such as aberrations, flare, and sigma fluctuation, and secondly, the change in photoresist characteristics. However, due to the rapidly increasing usage of ArF exposure tools, Band Width (BW) characteristics of the laser source is an additional factor whose contribution is becoming more critical. Ideally, BW is monochromatic, thereby not affected by chromatic aberration change. However, in reality, the BW exhibits a shape of spectral distribution with a finite width. This study describes experimental and simulation results for E95%, and how performance of both CDs and Laser is dependent on E95% in order to meet 1nm of IDB towards 45nm Node. -IDB vs. E95% -CD at through pitch vs. E95% -Process Latitude vs. E95% -DOF -EL -Pattern shortening vs. E95%
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Toshihiro Oga, Tomohiko Yamamoto, Teruyoshi Yao, Satoru Asai, Takehito Kudo, Tsuyoshi Toki, "Challenging to meet 1nm iso-dense bias (IDB) by controlling laser spectrum", Proc. SPIE 6520, Optical Microlithography XX, 65203P (27 March 2007); doi: 10.1117/12.712509; https://doi.org/10.1117/12.712509
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KEYWORDS
Printing

Critical dimension metrology

Chromatic aberrations

Reticles

SRAF

Laser stabilization

Diffusion

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