State of the art lithography is continually driven to resolve increasingly smaller features, forcing k1 values
for lithography processes ever lower. In order to image these difficult features with reliable fidelity,
lithographers must increasingly use Resolution Enhancement Techniques (RETs). One such technique that
is proposed in this paper uses small, sub-wavelength grooves placed in close proximity to an aperture.
These sub-wavelength grooves create evanescent fields bound to the surface between the absorber and the
mask substrate, decaying exponentially in lateral directions. In this work we demonstrate the ability to use
such Evanescent Wave Assist Features (EWAFs) to enhance the propagating near and far field energy
within openings such as slits and contacts. Using a Finite Difference Time Domain model, the effects of
these evanescent wave assist features are explored in both the near and far field regions. Several cases of
absorber material, feature type, spacing, and illumination will be presented.