27 March 2007 Toward standard process models for OPC
Author Affiliations +
Proceedings Volume 6520, Optical Microlithography XX; 652043 (2007); doi: 10.1117/12.712229
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
We present description of the Compact Model 1 (CM1) resist model designed for use in OPC and OPC verification. We discuss model formulation and compare model predictions to the resist measurements. We propose to use CM1 model as a standard pattern transfer model during chip-scale process simulations.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri Granik, Dmitry Medvedev, Nick Cobb, "Toward standard process models for OPC", Proc. SPIE 6520, Optical Microlithography XX, 652043 (27 March 2007); doi: 10.1117/12.712229; https://doi.org/10.1117/12.712229
PROCEEDINGS
6 PAGES


SHARE
KEYWORDS
Process modeling

Optical proximity correction

Convolution

Diffusion

Scanning electron microscopy

Photoresist processing

Instrument modeling

Back to Top