A thin FinFET Si-fin body structure fabricated with 193-nm scanner photolithography and composite hard mask etching technique upon bulk-Si substrate

Wen-Shiang Liao; Yu-Huan Liu; Wen-Tung Chang; Tung-Hung Chen; Tommy Shih; Huan-Chiu Tsen; Lee Chung

doi:10.1117/12.714391

27 March 2007 A thin FinFET Si-fin body structure fabricated with 193-nm scanner photolithography and composite hard mask etching technique upon bulk-Si substrate

Wen-Shiang Liao, Yu-Huan Liu, Wen-Tung Chang, Tung-Hung Chen, Tommy Shih, Huan-Chiu Tsen, Lee Chung

Author Affiliations +

Proceedings Volume 6520, Optical Microlithography XX; 65204N (2007) https://doi.org/10.1117/12.714391
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

A thin FinFET bulk Si-fin body structure has been successfully fabricated upon bulk-Si wafers through using 193nm scanner lithography and a composite hard mask etching technique. First, a 100Å-thick buffer SiO₂ layer was thermally grown upon the bulk silicon layer and subsequently a 1200Å-thick SiN_x layer and a 1000Å-thick TEOS SiO₂ hard mask layer was chemically vapor deposited to form a composite hard mask structure of buffer-SiO₂/SiN_x/TEOS. Second, both 1050Å-thick BARC and 2650Å-thick photoresist (P/R) were coated and a 193nm scanner lithography tool was used for the Si-fin body layout patterning under relatively high exposure energy. This achieves the ADI (after develop inspection) of 80nm from the original as-drawn Si-fin layout of 110nm. Then, a deep sub-micron plasma etcher was used for an aggressive P/R and BARC trimming down processing and both the capping TEOS and CVD-SiN_x with its underlying buffer oxide layers were subsequently etched in other etching plasma chambers, respectively. Resultantly, the AMI (after mask inspection) can reach 60nm. Subsequently, both the P/R and BARC were removed with a nominal plasma ashing as well as a RCA cleaning for the final sub-micron Si-fin plasma etching. Eventually, a 60nm-width and 400nm-height bulk Si-fin body structure can be successfully etched out after a fixed time-mode silicon plasma etching.

Citation Download Citation

Wen-Shiang Liao, Yu-Huan Liu, Wen-Tung Chang, Tung-Hung Chen, Tommy Shih, Huan-Chiu Tsen, and Lee Chung "A thin FinFET Si-fin body structure fabricated with 193-nm scanner photolithography and composite hard mask etching technique upon bulk-Si substrate", Proc. SPIE 6520, Optical Microlithography XX, 65204N (27 March 2007); https://doi.org/10.1117/12.714391

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available