27 March 2007 The choice of mask in consideration of polarization effects at high NA system
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Abstract
Strong resolution enhancement techniques (RETs) are highly demanded to overcome the resolution limit of sub-60nm lithography. ArF immersion lithography may be the best candidate for sub-60nm device patterning. However, the polarization effect becomes more prominent to degrade the image quality in high NA immersion lithography as the feature size shrinks. Therefore, it is important to understand the polarization effect in the mask. The induced polarization effect shows the different aspects between the binary and the attenuated phase shift mask (PSM). In this paper, we considered the effects of polarization state as a function of mask properties. We evaluated the performances of the binary mask and the attenuated PSM by using simulation, AIMSTM (Aerial Image Measurement System) tool, and real wafer printing. We find out that there are no differences between the binary mask and the attenuated PSM in view of image contrast and mask error enhancement factor (MEEF).
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Sung-Hyuck Kim, Sung-Hyuck Kim, Soon-Ho Kim, Soon-Ho Kim, Sang-Yong Yu, Sang-Yong Yu, Yong-Hoon Kim, Yong-Hoon Kim, Jeung-Woo Lee, Jeung-Woo Lee, Han-Ku Cho, Han-Ku Cho, "The choice of mask in consideration of polarization effects at high NA system", Proc. SPIE 6520, Optical Microlithography XX, 65204R (27 March 2007); doi: 10.1117/12.711318; https://doi.org/10.1117/12.711318
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