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27 March 2007 Immersion defect reduction, part I: analysis of water leaks in an immersion scanner
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Abstract
This paper reports the water-leakage mechanism of the immersion hood in an immersion scanner. The proposed static analysis reveals the immersion hood design performance in defect distribution. A dynamic water-leakage model traces the leaked water and identifies its position on the wafer, during exposure. Comparing simulation to experimental results on bare-silicon and resist-coated wafers, the defect type, source of residuals, and critical settings on the immersion system were clearly identified.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fu-Jye Liang, Hsing Chang, Lin-Hung Shiu, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, and Burn J. Lin "Immersion defect reduction, part I: analysis of water leaks in an immersion scanner", Proc. SPIE 6520, Optical Microlithography XX, 65204U (27 March 2007); doi: 10.1117/12.712531; https://doi.org/10.1117/12.712531
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