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21 March 2007 Lithography simulation in DfM: achievable accuracy versus requirements
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Abstract
Lithography simulation remains one of the primary aspects of most DfM flows, along with critical area analysis and chem-mech-polish (CMP) modeling. Often, the accuracy of the DfM flow is judged solely on the accuracy of the lithographic simulation. In this paper we attempt to refute that viewpoint and highlight the many sources of error in a DfM flow. We examine the factors that impact accuracy and attempt to quantify their effect. Differences between rigorous simulation, which includes full mask data preparation along with lithography simulation, and the use of compact models are explored. Required and achievable DfM accuracy over time and across multiple fabs is examined and the use of a "closed-loop" DfM flow is proposed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Scott Mansfield, Ioana Graur, Geng Han, Jason Meiring, Lars Liebmann, and Dureseti Chidambarrao "Lithography simulation in DfM: achievable accuracy versus requirements", Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 652106 (21 March 2007); https://doi.org/10.1117/12.712437
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