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21 March 2007 Pattern decomposition for double patterning from photomask viewpoint
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Abstract
Double Patterning Technology (DPT) has been evaluated and reported since 32nm half pitch is recognized to be required with conventional immersion ArF lithography. DPT requires pattern decomposition into two pattern sets and the decomposition becomes more complex for especially so-called logic pattern including irregular pattern placement and many-vertices polygons. The innocent decomposition often creates forced segmentation of those polygons and two different aspect of photomasks such as density or substantial line direction. Those decomposed photomasks not only produce large possibilities of different error behavior but also leave annoyance complexity untouched. It is well known that line-ends and dense twisted lines produce large MEF. Then tighter specification for photomask fabrication have been required since the resolution limit was getting below the exposure wavelength. So the decomposition that creates tight patterns into separate two photomasks has possibilities of the fabrication load lighter. In this paper, the decomposition of criteria for DPT which helps photomask fabrication with a small possibilities is evaluated and discussed. Furthermore though it's getting to popular that overlay and CD uniformity of photomasks for DPT impact to completed CD with wafer exposure directly, considering other errors such as CD shift or phase error which are supposed to recover by exposure in addition to those errors are also studied.
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Nobuhito Toyama, Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Hiroshi Mohri, and Naoya Hayashi "Pattern decomposition for double patterning from photomask viewpoint", Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 65210V (21 March 2007); doi: 10.1117/12.711915; https://doi.org/10.1117/12.711915
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