Modeling spatial gate length variation in the 0.2µm to 1.15mm separation range

Paul Friedberg; Willy Cheung; George Cheng; Qian Ying Tang; Costas J. Spanos

doi:10.1117/12.710668

21 March 2007 Modeling spatial gate length variation in the 0.2μm to 1.15mm separation range

Paul Friedberg, Willy Cheung, George Cheng, Qian Ying Tang, Costas J. Spanos

Proceedings Volume 6521, Design for Manufacturability through Design-Process Integration; 652119 (2007) https://doi.org/10.1117/12.710668
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Circuit performance variability is significantly impacted by variations in gate length caused in microlithographic pattern transfer [1]. Previous studies [2] have shown through simulation that by completely reconciling sources of deterministic variation, long-range (millimeter separation scale) spatial correlation in the remaining variation is virtually zero. To complete the model for spatial variation and correlation in critical dimension (CD), a new set of electrical linewidth metrology (ELM) test structures were then designed to target the sub-mm regime [3]. In this work, we report measurement results from those micron-scale ELM test structures. The micron-scale (0.2μm to 1.15mm) variation can be decomposed into a very large chip-to-chip component, a small and systematic density-dependent component, and a small random component; spatial correlation in gate length for the micron-scale regime is negligible.

Citation Download Citation

Paul Friedberg, Willy Cheung, George Cheng, Qian Ying Tang, and Costas J. Spanos "Modeling spatial gate length variation in the 0.2μm to 1.15mm separation range", Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 652119 (21 March 2007); https://doi.org/10.1117/12.710668

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