21 March 2007 Boundary-based cellwise OPC for standard-cell layouts
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Proceedings Volume 6521, Design for Manufacturability through Design-Process Integration; 65211O (2007); doi: 10.1117/12.712185
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
Model based optical proximity correction (OPC) has become necessary at 90nm technology node. Cellwise OPC is an attractive technique to reduce the mask data size as well as the prohibitive runtime of full-chip OPC. As feature dimensions have gotten smaller, the radius of influence for edge features has extended further into neighboring cells such that it is no longer sufficient to perform cellwise OPC independent of neighboring cells, especially for the critical layers. The methodology described in this work accounts for features in neighboring cells and allows a cellwise approach to be applied to cells with a printed gate length of 45nm with the projection that it can also be applied to future technology nodes. OPC-ready cells are generated at library creation (independent of placement) using a boundary-based technique. Each cell has a tractable number of OPC-ready versions due to an intelligent characterization of standard cell layout features. Results are very promising: the average edge placement error (EPE) for all metal1 features in 100 layouts is 0.731nm which is less than 1% of metal1 width; the maximum EPE for poly features reduced to 1/3, compared to cellwise OPC without considering boundaries, creating similar levels of lithographic accuracy while obviating any of the drawbacks inherent in layout specific full-chip model-based OPC.
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David M. Pawlowski, Liang Deng, Martin D. F. Wong, "Boundary-based cellwise OPC for standard-cell layouts", Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 65211O (21 March 2007); doi: 10.1117/12.712185; https://doi.org/10.1117/12.712185
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KEYWORDS
Optical proximity correction

Lithography

Photomasks

Standards development

Printing

Resolution enhancement technologies

Scattering

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