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21 March 2007 DRC and mask friendly pattern and probe aberration monitors
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Abstract
This paper considers modifications of the Pattern-and-Probe monitors to make them suitable for including within the circuit design as drop in monitors for the lithography process. Nonidealities such as lens aberrations can be monitored through patterns derived from the Zernike polynomials. However, the non-Manhattan geometries produced by this theoretical method are not mask friendly, and in fact took many hours to manufacture in their first attempt. This paper presents modifications to original aberration monitors to allow them to pass DRC checks and thus be more mask-friendly. Additionally, the original patterns' quantitative interpretation also requires over exposure sequences, special SEM reading of dots instead of linewidth, and separate calibration of the EM performance of the central reference probe. The principles expressed in the original aberration monitors can be integrated into more traditional circuit layouts to create more processing acceptable patterns, with the example shown in this paper retaining 68% of it sensitivity and no decrease in orthogonality.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juliet Holwill and Andrew R. Neureuther "DRC and mask friendly pattern and probe aberration monitors", Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 65211U (21 March 2007); https://doi.org/10.1117/12.712383
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