Lifetime characterization of powercapacitive RF MEMS switches

Afshin Ziaei

doi:10.1117/12.713601

13 April 2007 Lifetime characterization of powercapacitive RF MEMS switches

Afshin Ziaei

Proceedings Volume 6528, Nanosensors, Microsensors, and Biosensors and Systems 2007; 65280J (2007) https://doi.org/10.1117/12.713601
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2007, San Diego, California, United States

Abstract

RF MEMS switches provide a low-cost, high performance solution for many RF/microwave applications these switches will be important building blocks for designing phase shifters, switched filters reflector array antennas for military and commercial markets. In this paper, progress in characterizing of THALES capacitive MEMS devices under high RF power is presented. The design, fabrication and testing of capacitive RF MEMS switches for microwave/mm- wave applications on high-resistivity silicon substrate is presented. The switches tested demonstrated power handling capabilities of 1W (30 dBm) for continuous RF power. The reliability of these switches was tested at various power levels indicating that under continuous RF power. In addition a description of the power failures and their associated operating conditions is presented. The PC-based test stations to cycle switches and measure lifetime under DC and RF loads have been developed. Best-case lifetimes of 10¹⁰ cycles have been achieved in several switches from different lots under 30 dbm RF power.

Citation Download Citation

Afshin Ziaei "Lifetime characterization of powercapacitive RF MEMS switches", Proc. SPIE 6528, Nanosensors, Microsensors, and Biosensors and Systems 2007, 65280J (13 April 2007); https://doi.org/10.1117/12.713601

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