Density Of States At Mid Gap In Hydrogenated Amorphous Silicon

E Yahya; H R Shanks

doi:10.1117/12.938348

24 September 1986 Density Of States At Mid Gap In Hydrogenated Amorphous Silicon

E Yahya, H R Shanks

Proceedings Volume 0653, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V; (1986) https://doi.org/10.1117/12.938348
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

The density of states distributions near mid gap in a series of hydrogenated amorphous silicon films have been determined from space charge limited current measurements. The measurements were made on Au/aSi:H Schottky diode structures prepared by reactive rf sputter deposition. Samples with hydrogen concentrations near 16% as determined from infrared absorption had densities of states of 3x1014 states/cm3 eV. The experimental results indicate that high quality aSi:H films with low densities of states can be obtained under certain deposition conditions and that the density of states at mid gap is hydrogen concentration dependent with a minimum near 16%. For a given hydrogen concentration, films thicker than 2 um yielded the lowest density of states consistent with a model in which diffusion currents can be neglected and where surface and interface layers have a higher defect density than the bulk of the film.

Citation Download Citation

E Yahya and H R Shanks "Density Of States At Mid Gap In Hydrogenated Amorphous Silicon", Proc. SPIE 0653, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V, (24 September 1986); https://doi.org/10.1117/12.938348

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