EUV I Masks
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Improved CD uniformity for advanced masks using the Sigma7500 pattern generator and ProcessEqualizer
Innovative application of the RCWA method for the ultra-sensitive transmittance-based CD measurements on phase-shift masks
Benchmark and gap analysis of current mask carriers vs future requirements: example of the carrier contamination
Electron beam lithography simulation based on a single convolution approach: application for sub-45nm nodes
Resist and BARC outgassing measured by TD-GCMS: investigation during the exposure or the bake steps of the lithographic process