3 May 2007 Quantitative measurement of EUV resist outgassing
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Proceedings Volume 6533, 23rd European Mask and Lithography Conference; 653318 (2007) https://doi.org/10.1117/12.737192
Event: European Mask and Lithography Conference2007, 2007, Grenoble, France
Abstract
The Mo/Si multilayer mirrors used for extreme ultraviolet (EUV) lithography can become contaminated during exposure in the presence of some hydrocarbons [1-3]. Because this leads to a loss in the reflectivity of the optics and throughput of the exposure tools, it needs to be avoided. Since photoresists are known to outgas during exposure to EUV radiation in a vacuum environment, the careful choice of materials is important to preserving the EUV optics. Work therefore has been performed to measure the species and quantities of molecules that outgas from EUV resists when exposed to EUV radiation [4-7].
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Greg Denbeaux, Greg Denbeaux, Rashi Garg, Rashi Garg, Justin Waterman, Justin Waterman, Chimaobi Mbanaso, Chimaobi Mbanaso, Jeroen Netten, Jeroen Netten, Robert Brainard, Robert Brainard, Yu-Jen Fan, Yu-Jen Fan, Leonid Yankulin, Leonid Yankulin, Alin Antohe, Alin Antohe, Kevin DeMarco, Kevin DeMarco, Molly Jaffe, Molly Jaffe, Matthew Waldron, Matthew Waldron, Kim Dean, Kim Dean, } "Quantitative measurement of EUV resist outgassing", Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 653318 (3 May 2007); doi: 10.1117/12.737192; https://doi.org/10.1117/12.737192
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