14 May 2007 320 × 256 infrared focal plane array based on type-II InAs/GaSb superlattice with a 12-&mgr;m cutoff wavelength
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Abstract
In the past few years, significant progress has been made in the structure design, growth and processing of Type-II InAs/GaSb superlattice photodetectors. Type-II superlattice demonstrated its ability to perform imaging in the middle and long infra-red range, becoming a potential competitor for technologies such as QWIP and HgCdTe. Using an empirical tight-binding model, we developed a superlattice design that matches the lattice parameter of GaSb substrates and presents a cutoff wavelength of 12 &mgr;m. Electrical and optical measurements performed on single element detectors at 77 K showed an R0A averaging 13 &OHgr;.cm2 and a quantum efficiency as high as 54%. We demonstrated high quality material growth with x-ray FWHM below 30 arcsec and an AFM rms roughness of 1.5 Å over an area of 20x20 &mgr;m2. A 320x256 array of 25x25&mgr;m2 pixels, hybridized to an Indigo Read Out Integrated Circuit, performed thermal imaging up to 185 K with an operability close to 97%. The noise equivalent temperature difference at 81 K presented a peak at 270 mK, corresponding to a mean value of 340 mK.
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Pierre-Yves Delaunay, Pierre-Yves Delaunay, Binh Minh Nguyen, Binh Minh Nguyen, Darin Hoffman, Darin Hoffman, Manijeh Razeghi, Manijeh Razeghi, } "320 × 256 infrared focal plane array based on type-II InAs/GaSb superlattice with a 12-&mgr;m cutoff wavelength", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654204 (14 May 2007); doi: 10.1117/12.723832; https://doi.org/10.1117/12.723832
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