14 May 2007 MBE grown type-II superlattice photodiodes for MWIR and LWIR imaging applications
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Abstract
We report on the status of GaSb/InAs type-II superlattice diodes grown by molecular beam epitaxy (MBE) and designed for infrared absorption in the 2-5μm and 8-12&mgr;m bands. Recent LWIR devices have produced detectivities as high as 8x1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of approximately 12&mgr;m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11μm range. MWIR devices have produced detectivities as high as 8x1013 Jones with a differential resistance-area product greater than 3x107 Ohmcm2 at 80K with a long wavelength cutoff of approximately 3.7μm. The measured quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2-3μm range at low temperature and increases to over 60% near room temperature. Initial results on SiO2 and epitaxial-regrowth based passivation techniques are also presented.
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Cory J. Hill, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala, David R. Rhiger, Robert E. Kvaas, Sean F. Harris, "MBE grown type-II superlattice photodiodes for MWIR and LWIR imaging applications", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654205 (14 May 2007); doi: 10.1117/12.721330; https://doi.org/10.1117/12.721330
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