14 May 2007 InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays
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Proceedings Volume 6542, Infrared Technology and Applications XXXIII; 654206 (2007); doi: 10.1117/12.719227
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States
Abstract
The fabrication and optimization of InAs/GaSb type-II superlattice (SL) detectors for single-color and dual-color focal plane arrays in the mid-wavelength infrared spectral range between 3-5 &mgr;m is reported. Single color focal plane arrays with 288 x 384 detector elements and 24 &mgr;m pitch have been fabricated with high pixel yield. Camera systems with InAs/GaSb SL detectors reveal NETD values of 27.9 mK at a cut-off wavelength of &lgr;c = 4.9 &mgr;m for an integration time of only 1 msec with F#/2.4 optics. A dual-color MWIR/MWIR InAs/GaSb SL camera, developed for missile approach warning systems, features simultaneous and spatially coincident detection for both spectral channels on each pixel. The camera system with 288 x 384 detector elements in 40 &mgr;m pitch shows excellent NETD values and high pixel operability. The fabrication of dual-color focal plane arrays on 3" GaSb substrates is presented.
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Martin Walther, Robert Rehm, Joachim Fleissner, Johannes Schmitz, Johann Ziegler, Wolfgang Cabanski, Rainer Breiter, "InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654206 (14 May 2007); doi: 10.1117/12.719227; https://doi.org/10.1117/12.719227
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KEYWORDS
Sensors

Stereolithography

Staring arrays

Cameras

Gallium antimonide

Mid-IR

Imaging systems

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