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14 May 2007 Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy
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Intrinsic carriers play a dominant role especially in the long wavelength (8-12 μm cut-off) HgCdTe material near ambient temperatures due to high thermal generation of carriers. This results in low minority carrier lifetimes caused by Auger recombination processes. Consequently, this low lifetime at high temperatures results in high dark currents and subsequently high noise. Cooling is one means of reducing this type of detector noise. However, the challenge is to design photon detectors to achieve background limited performance (BLIP) at the highest possible operating temperature; with the greatest desire being close to ambient temperature operation. We have demonstrated a unique planar device architecture using a novel approach in obtaining low arsenic doping concentrations in HgCdTe. Results indicate Auger suppression in P+/π/N+ devices at 300K and have obtained saturation current densities of the order of 3 milli Amps-cm2 on these devices.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Priyalal S. Wijewarnasuriya, Gregory Brill, Yuanping Chen, Nibir K. Dhar, Chris Grein, Silviu Velicu, P. Y. Emelie, HyeSon Jung, Sivalingam Sivanathan, Arvind D'Souza, Maryn G. Stapelbroek, and John Reekstin "Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420G (14 May 2007);

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