Paper
14 May 2007 Development of mid-wave 320x256 infrared focal plane array in Korea
Jong-Hwa Choi, Sun Ho Kim, Chi Yeon Kim, Jae Won Kim, Nam Hwan Kim, Seung-Man Park, Soo-Ho Bae, Young-Ho Kim, Byung-Hyuk Kim, Min-Suk Jeoung, Han Jung
Author Affiliations +
Abstract
This paper reports the development of mid-wave 320x256 HgCdTe IRFPA with 30μm pixel pitch since 2002 in Korea. All key technologies such as HgCdTe photodiode array fabrication process, the design of silicon readout integrated circuit and hybridization process between HgCdTe photodiode array and ROIC including underfill encapsulation process are studied and realized. The fabricated IRFPA shows good electro-optical performances such as operability over 99%, NETD of ~ 17mK and there is no degradation in the operability during 500 thermal cycles.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jong-Hwa Choi, Sun Ho Kim, Chi Yeon Kim, Jae Won Kim, Nam Hwan Kim, Seung-Man Park, Soo-Ho Bae, Young-Ho Kim, Byung-Hyuk Kim, Min-Suk Jeoung, and Han Jung "Development of mid-wave 320x256 infrared focal plane array in Korea", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420H (14 May 2007); https://doi.org/10.1117/12.719120
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KEYWORDS
Readout integrated circuits

Mercury cadmium telluride

Indium

Clocks

Photodiodes

Staring arrays

Thermography

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