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14 May 2007 Affordable high-performance LW IRFPAs made from HgCdTe grown by MOVPE
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Abstract
This paper describes the fabrication and performance of affordable LW infrared focal plane arrays (IRFPAs) made from HgCdTe (MCT) grown by Metal Organic Vapour Phase Epitaxy (MOVPE) bump bonded to silicon read-out integrated circuits (ROICs). The growth substrate is GaAs, being readily available from several sources and suitable for wafer scale processing. Arrays of size up to 640x512 at 24 μm pixel pitch have been produced, encapsulated, and demonstrated in a camera system. Arrays of this size are produced in n-on-p material, that is, the common layer is p-type. This orientation is chosen from a contact technology viewpoint. It is shown that at higher biases trap-assisted tunnelling (TAT) can limit the performance of arrays. This becomes an issue for large arrays at high infrared flux with a p-type common layer due to its inherent higher sheet resistance compared to n-type, this can result in debiassing of the central elements. The key is found to be the control of the MCT structure and quality to ensure good diode performance with minimal TAT, allowing the higher biases needed to overcome debiassing.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. G. Hipwood, C. L. Jones, D. Walker, C. J. Shaw, P. Abbott, R. A. Catchpole, M. Ordish, C. D. Maxey, H. W. Lau, P. Knowles, and M. C. Wilson "Affordable high-performance LW IRFPAs made from HgCdTe grown by MOVPE", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420I (14 May 2007); https://doi.org/10.1117/12.720647
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