Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based
quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance.
The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NE&Dgr;T) of 17 mK at a
95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NE&Dgr;T
of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array
after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance
(BLIP) at 90K and 70K operating temperatures respectively, with similar optical and background conditions. It is well
known that III-V compound semiconductor materials such as GaAs, InP, etc. are easy to grow and process into devices.
In addition, III-V compound semiconductors are available in large diameter wafers, up to 8-inches. Thus, III-V
compound semiconductor based infrared focal plane technologies such as QWIP, InSb, and strain layer superlattices
(SLS) are potential candidates for the development of large format focal planes such as 4096x4096 pixels and larger. In
this paper, we will discuss the possibility of extending the infrared detector array size up to 16 megapixels.