Recent progress in transition metal doped II-VI mid-IR lasers

Sergey B. Mirov; Vladimir V. Fedorov; Igor S. Moskalev; Dmitri Martyshkin; Andrew Gallian; Changsu Kim

doi:10.1117/12.719317

Translator Disclaimer

10 May 2007 Recent progress in transition metal doped II-VI mid-IR lasers

Sergey B. Mirov, Vladimir V. Fedorov, Igor S. Moskalev, Dmitri Martyshkin, Andrew Gallian, Changsu Kim

Author Affiliations +

Proceedings Volume 6552, Laser Source Technology for Defense and Security III; 65520Y (2007) https://doi.org/10.1117/12.719317
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

Recent progress in transition metal doped II-VI semiconductor materials (mainly Cr²⁺:ZnSe) makes them the laser sources of choice when one needs a compact system with continuous tunability over 2-3.1 &mgr;m, output powers up to 2.7 W, and high (up to 70%) conversion efficiency. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics make these materials ideal candidates for "non-traditional" regimes of operation such as microchip and multi-line lasing. This article reviews these non-traditional Cr-doped mid-IR lasers as well as describes emerging Fe²⁺:ZnSe lasers having potential to operate at room temperature over the spectral range extended to 3.7-5.1 &mgr;m. In addition to effective RT mid-IR lasing transition metal doped II-VI media, being wide band semiconductors, hold potential for direct electrical excitation. This work shows the initial steps towards achieving this goal by studying Cr²⁺, Co²⁺, and Fe²⁺ doped quantum dots. We have demonstrated a novel method of TM doped II-VI quantum dots fabrication based on laser ablation in liquid environment. TM doped II-VI quantum dots demonstrated strong mid-IR luminescence. It opens a new pathway for future optically and electrically pumped mid-IR lasers based on TM doped quantum confined structures.

Citation Download Citation

Sergey B. Mirov, Vladimir V. Fedorov, Igor S. Moskalev, Dmitri Martyshkin, Andrew Gallian, and Changsu Kim "Recent progress in transition metal doped II-VI mid-IR lasers", Proc. SPIE 6552, Laser Source Technology for Defense and Security III, 65520Y (10 May 2007); https://doi.org/10.1117/12.719317

ACCESS THE FULL ARTICLE