Translator Disclaimer
10 May 2007 Recent progress in transition metal doped II-VI mid-IR lasers
Author Affiliations +
Recent progress in transition metal doped II-VI semiconductor materials (mainly Cr2+:ZnSe) makes them the laser sources of choice when one needs a compact system with continuous tunability over 2-3.1 &mgr;m, output powers up to 2.7 W, and high (up to 70%) conversion efficiency. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics make these materials ideal candidates for "non-traditional" regimes of operation such as microchip and multi-line lasing. This article reviews these non-traditional Cr-doped mid-IR lasers as well as describes emerging Fe2+:ZnSe lasers having potential to operate at room temperature over the spectral range extended to 3.7-5.1 &mgr;m. In addition to effective RT mid-IR lasing transition metal doped II-VI media, being wide band semiconductors, hold potential for direct electrical excitation. This work shows the initial steps towards achieving this goal by studying Cr2+, Co2+, and Fe2+ doped quantum dots. We have demonstrated a novel method of TM doped II-VI quantum dots fabrication based on laser ablation in liquid environment. TM doped II-VI quantum dots demonstrated strong mid-IR luminescence. It opens a new pathway for future optically and electrically pumped mid-IR lasers based on TM doped quantum confined structures.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey B. Mirov, Vladimir V. Fedorov, Igor S. Moskalev, Dmitri Martyshkin, Andrew Gallian, and Changsu Kim "Recent progress in transition metal doped II-VI mid-IR lasers", Proc. SPIE 6552, Laser Source Technology for Defense and Security III, 65520Y (10 May 2007);


Back to Top