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10 May 2007 Recent progress in transition metal doped II-VI mid-IR lasers
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Abstract
Recent progress in transition metal doped II-VI semiconductor materials (mainly Cr2+:ZnSe) makes them the laser sources of choice when one needs a compact system with continuous tunability over 2-3.1 &mgr;m, output powers up to 2.7 W, and high (up to 70%) conversion efficiency. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics make these materials ideal candidates for "non-traditional" regimes of operation such as microchip and multi-line lasing. This article reviews these non-traditional Cr-doped mid-IR lasers as well as describes emerging Fe2+:ZnSe lasers having potential to operate at room temperature over the spectral range extended to 3.7-5.1 &mgr;m. In addition to effective RT mid-IR lasing transition metal doped II-VI media, being wide band semiconductors, hold potential for direct electrical excitation. This work shows the initial steps towards achieving this goal by studying Cr2+, Co2+, and Fe2+ doped quantum dots. We have demonstrated a novel method of TM doped II-VI quantum dots fabrication based on laser ablation in liquid environment. TM doped II-VI quantum dots demonstrated strong mid-IR luminescence. It opens a new pathway for future optically and electrically pumped mid-IR lasers based on TM doped quantum confined structures.
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Sergey B. Mirov, Vladimir V. Fedorov, Igor S. Moskalev, Dmitri Martyshkin, Andrew Gallian, and Changsu Kim "Recent progress in transition metal doped II-VI mid-IR lasers", Proc. SPIE 6552, Laser Source Technology for Defense and Security III, 65520Y (10 May 2007); https://doi.org/10.1117/12.719317
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