10 May 2007 High brightness semiconductor lasers at 1300-1600 nm
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Abstract
We present recent advances in high power semiconductor laser bars and arrays at eye-safe wavelengths including increased spectral brightness with internal gratings to narrow and stabilize the spectrum. These devices have the potential to dramatically improve diode pumped Er:YAG systems and enable new direct diode applications.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. L. Osowski, M. L. Osowski, R. M. Lammert, R. M. Lammert, S. W. Oh, S. W. Oh, W. Hu, W. Hu, C. Panja, C. Panja, P. T. Rudy, P. T. Rudy, T. Stakelon, T. Stakelon, J. E. Ungar, J. E. Ungar, } "High brightness semiconductor lasers at 1300-1600 nm", Proc. SPIE 6552, Laser Source Technology for Defense and Security III, 655213 (10 May 2007); doi: 10.1117/12.719396; https://doi.org/10.1117/12.719396
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