8 May 2007 Ultrafast spectroscopy of semiconductor Bragg reflectors
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Abstract
ZnS/ZnSe Bragg reflectors under condition of ZnSe interband excitation by a femtosecond laser pulse exhibit strong narrow-band modification of absorption and wide-band modification of reflection. Mean decay time for nonlinear reflection in heterostructures ranges from 2 to 3 ps whereas in bare ZnSe monolayer it exceeds 5 ps. Possible underlying physical processes responsible for nonlinear refraction in the transparency region include interplay of absorption driven nonlinear refraction via Kramers-Kronig relations and intrinsic dielectric properties of dense electron-hole plasma. For nonlinear absorption at ZnSe band edge, interplay of plasma screening effects and states filling effects are relevant.
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M. V. Ermolenko, M. V. Ermolenko, S. A. Tikhomirov, S. A. Tikhomirov, V. V. Stankevich, V. V. Stankevich, O. V. Buganov, O. V. Buganov, S. V. Gaponenko, S. V. Gaponenko, P. I. Kuznetsov, P. I. Kuznetsov, G. G. Yakuscheva, G. G. Yakuscheva, "Ultrafast spectroscopy of semiconductor Bragg reflectors", Proc. SPIE 6582, Nonlinear Optics and Applications II, 65821H (8 May 2007); doi: 10.1117/12.722688; https://doi.org/10.1117/12.722688
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