8 May 2007 Four-wave mixing in intersubband transitions of a semiconductor quantum well structure
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Abstract
We study theoretically the phenomenon of four-wave mixing in intersubband transitions of a symmetric double quantum well structure. In the theoretical model we consider two quantum well subbands that are coupled by a strong pump electromagnetic field and a weak probe electromagnetic field, taking into account the effects of electron-electron interactions. For the description of the system dynamics we use the density matrix equations obtained from the effective nonlinear Bloch equations. These equations are solved numerically for a realistic semiconductor quantum well structure GaAs/AlGaAs. We show that the four-wave mixing spectrum can be significantly dependent on the frequency and the intensity of the pump field and on electron sheet density.
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Emmanuel Paspalakis, Emmanuel Paspalakis, Aggeliki Kanaki, Aggeliki Kanaki, Andreas F. Terzis, Andreas F. Terzis, } "Four-wave mixing in intersubband transitions of a semiconductor quantum well structure", Proc. SPIE 6582, Nonlinear Optics and Applications II, 65821N (8 May 2007); doi: 10.1117/12.722187; https://doi.org/10.1117/12.722187
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