Translator Disclaimer
1 May 2007 InAs and InAs(Sb)(P) (3-5 &mgr;m) immersion lens photodiodes for portable optic sensors
Author Affiliations +
InAs and InAs(Sb)(P) based heterostructures with InAsSbP claddings grown onto heavily doped or undoped n-InAs substrates have been processed into 230÷430 &mgr;m wide mesa flip-chip devices operating in the 3÷5 &mgr;m spectral range. We present temperature dependence of I-V, RoA, SI and D* as well as the dependence on a photon energy in uncoated backside illuminated and equipped with an immersion lens photodiodes respectively. Room temperature D*&lgr; as high as (1.75x1011÷3x108) cmHz1/2W-1 was achieved in photodiodes with Si lens having effective diameter of 3.3 mm and operating in the 3÷5 &mgr;m range correspondingly.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Remennyy, B. A. Matveev, N. V. Zotova, S. A. Karandashev, N. M. Stus, and N. D. Ilinskaya "InAs and InAs(Sb)(P) (3-5 &mgr;m) immersion lens photodiodes for portable optic sensors", Proc. SPIE 6585, Optical Sensing Technology and Applications, 658504 (1 May 2007);

Back to Top