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1 May 2007 InAs and InAs(Sb)(P) (3-5 &mgr;m) immersion lens photodiodes for portable optic sensors
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Abstract
InAs and InAs(Sb)(P) based heterostructures with InAsSbP claddings grown onto heavily doped or undoped n-InAs substrates have been processed into 230÷430 &mgr;m wide mesa flip-chip devices operating in the 3÷5 &mgr;m spectral range. We present temperature dependence of I-V, RoA, SI and D* as well as the dependence on a photon energy in uncoated backside illuminated and equipped with an immersion lens photodiodes respectively. Room temperature D*&lgr; as high as (1.75x1011÷3x108) cmHz1/2W-1 was achieved in photodiodes with Si lens having effective diameter of 3.3 mm and operating in the 3÷5 &mgr;m range correspondingly.
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M. A. Remennyy, B. A. Matveev, N. V. Zotova, S. A. Karandashev, N. M. Stus, and N. D. Ilinskaya "InAs and InAs(Sb)(P) (3-5 &mgr;m) immersion lens photodiodes for portable optic sensors", Proc. SPIE 6585, Optical Sensing Technology and Applications, 658504 (1 May 2007); https://doi.org/10.1117/12.722847
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