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16 May 2007 AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
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Abstract
Metal-Semiconductor-Metal photodiodes were fabricated on epitaxially grown AlxGa1-xN on Si(111). The Aluminium content of the layers grown by means of molecular beam epitaxy (MBE) was 50, 80 and 100%, respectively. The processing was performed by standard microelectronic fabrication techniques like photolithography, wet and dry etching (RIE) and physical and chemical vapor deposition (PVD,CVD). The devices were characterized under illumination in a wavelength range from 400 to 185nm to determine the cut-off wavelength defined by the band-gap energy. Typical figures of merit like spectral responsivity R quantum efficiency &eegr; and specific detectivity D* have been extracted from the measurement data.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. John, P. Malinowski, P. Aparicio, G. Hellings, A. Lorenz, M. Germain, F. Semond, J.-Y. Duboz, A. BenMoussa, J.-F. Hochedez, U. Kroth, and M. Richter "AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range", Proc. SPIE 6585, Optical Sensing Technology and Applications, 658505 (16 May 2007); https://doi.org/10.1117/12.723023
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