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16 May 2007 A SiGe optical receiver with large-area photodiode
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Herein we present optical receivers with external large-area photodiode. It is intended as POF receiver for 1.25Gb/s optical fiber-line access networks. Further an overview on high-speed optical receivers with integrated and external detector in CMOS and BiCMOS, as well as in technologies of III-V compounds is provided. This work's receiver circuits are realized in 0.35μm SiGe BiCMOS technology. The first amplifier stage is a two-transistor transimpedance amplifier using a common-emitter and an emitter-follower configuration. The light-sensitive areas of the two receivers presented are 0.25mm2 (squared PIN diode) and 0.5mm2 (circular APD), with a rise time of 0.4ns and 0.7ns, respectively, at 850nm light. A high sensitivity is also required, where the receiver with external PIN diode reaches a sensitivity of -25.9dBm at the optical input using low-cost silicon-based material only.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Artur Marchlewski, Wolgang Gaberl, and Horst Zimmermann "A SiGe optical receiver with large-area photodiode", Proc. SPIE 6585, Optical Sensing Technology and Applications, 65851Q (16 May 2007);

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