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15 May 2007 The influence of varying sputter deposition conditions on the wet chemical etch rate of AlN thin films
A. Ababneh, H. Kreher, H. Seidel, U. Schmid
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Proceedings Volume 6589, Smart Sensors, Actuators, and MEMS III; 65890U (2007) https://doi.org/10.1117/12.721686
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain
Abstract
Aluminium nitride (AlN) reactively sputter deposited from an aluminium target is an interesting compound material due to its CMOS compatible fabrication process and its piezoelectric properties. For the implementation in micromachined sensors and actuators an appropriate patterning technique is needed to form AlN-based elements. Therefore, the influence of different sputtering conditions on the vertical etch rate of AlN thin films with a typical thickness of 600 nm in phosphoric acid (H3PO4) is investigated. Under comparable conditions, such as temperature and concentration of the etchant, thin films with a high c-axis orientation are etched substantially slower compared to films with a low degree of orientation. When a high c-axis orientation is present detailed analyses of the etched topologies reveal surface characteristics with a low porosity and hence, low roughness values. From temperature dependant etching experiments an activation energy of 800 (± 30) meV is determined showing a reaction-controlled etching regime independent of sputter deposition conditions.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Ababneh, H. Kreher, H. Seidel, and U. Schmid "The influence of varying sputter deposition conditions on the wet chemical etch rate of AlN thin films", Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65890U (15 May 2007); https://doi.org/10.1117/12.721686
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Cited by 2 scholarly publications.
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