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15 May 2007 Temperature stress impact on power RF MEMS switches
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Proceedings Volume 6589, Smart Sensors, Actuators, and MEMS III; 65890V (2007) https://doi.org/10.1117/12.722010
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain
Abstract
In this paper, capacitive RF-MEMS switches topologies are investigated regarding their power handling capabilities. The topologies differ from the ability to handle thermal stress by an optimization of their anchorage arms. A specific meander arms design leads in fact to enhance by a decade the flexibility regarding their thermal expansion. To evaluate the proposed RF-MEMS morphology, a specific thermal stress protocol has been defined and applied from 20°C up to 120°C. The monitoring of air gap, actuation voltage and insertion losses has been performed after each thermal stress in order to check the impact of the temperature on working switch. The main result indicates that a different thermal behavior depending on the MEMS anchorage arms morphology has been obtained.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chloé Bordas, Katia Grenier, David Dubuc, Mathieu Paillard, Jean-Louis Cazaux, and Robert Plana "Temperature stress impact on power RF MEMS switches", Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65890V (15 May 2007); https://doi.org/10.1117/12.722010
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