17 May 2007 Design and development of a microheater on GaAs for MEMS gas sensor array
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This work describes the design, simulation, fabrication and characterization of a TiN/Pt microheater prepared on GaAs micromechanical structure as a prospective device for MEMS gas sensor array. We use the electro-thermal simulation to verify the properties of the designed microstructure, which conformed achievement of the operating temperatures in the range of 200 to 320°C with heating power less than 25 mW. The average temperature gradient in the active area does not exceed 0.6 K/μm. We demonstrated the fabrication of GaAs suspended membranes, realized in two steps, by combination of surface and bulk micromachining. We also describe the development and characterization of a microheater on a GaAs membrane. The power consumption at an operating temperature of approximately 550 K is about 30 mW and the achieved thermal resistance value is 8.43 K/mW.
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Ivan Hotovy, Ivan Hotovy, Vlastimil Rehacek, Vlastimil Rehacek, Tibor Lalinsky, Tibor Lalinsky, Stefan Hascik, Stefan Hascik, Fedor Mika, Fedor Mika, } "Design and development of a microheater on GaAs for MEMS gas sensor array", Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 658918 (17 May 2007); doi: 10.1117/12.721938; https://doi.org/10.1117/12.721938

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