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22 November 1986 Growth of Hg1-xCdxTe-epitaxial Layers By A Multi-Slice LPE Apparatus
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938546
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
Hgl-xCdxTe-layers have been grown on CdTe- and Cdi_yZnyTe-substrates by liquid-phase-epitaxy from a Te-rich solution in a vertical dipping system. This technique allows a series of layers to be grown simultaneously. Throughput and quality of the layers obtained are well suited for production of photovoltaic IR-detectors and renders this technique a promising alternative to bulk growth.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C Geibel, H Maier, and J Ziegler "Growth of Hg1-xCdxTe-epitaxial Layers By A Multi-Slice LPE Apparatus", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938546
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