Pb[sub]1-x[/sub]Eu[sub]x[/sub]Se For IR Device Applications

P Norton; K H Bachem; M Tacke

doi:10.1117/12.938560

22 November 1986 Pb_1-xEu_xSe For IR Device Applications

P Norton, K H Bachem, M Tacke

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938560
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Pb1-xEuxSe is a promising material for IR devices. The band gap becomes larger with the relative content of Europium. The preparation of Pb_1-xEu_xSe by molecular beam epitaxy and the properties of these layers will be described.

Citation Download Citation

P Norton, K H Bachem, and M Tacke "Pb_1-xEu_xSe For IR Device Applications", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938560

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