The electrical origin of the 1/f electrical noise in solid-state devices and integrated circuits

José-Ignacio Izpura

doi:10.1117/12.721175

Abstract

Contrarily to current theories based on hypothetical traps where charge carriers can translocate to, this paper gives an explanation for 1/f electrical noise in solid-state devices based on well known electrical effects taking place in these devices. A parasitic capacitor and the backgating effect of its thermal noise, both overlooked in the course of the years, are the basis of the above explanation. The above effect produces a resistance noise with a Lorentzian spectrum in any unbiased resistor. As soon as the resistor is biased, this spectrum is scattered into a continuous set of Lorentzian noise terms that synthesize 1/f noise over a frequency band that is an exponential function of the bias voltage V_DS expressed in thermal units V_T. This is due to the exponential dependence of the dynamical resistance in most semiconductor junctions. A V_DS=180mV is thus enough to give 1/f noise over three decades at room temperature. This unexpected and non-linear feature, where the spectrum of this noise results from the own bias used to measure it, has kept 1/f noise as a puzzling and enigmatic noise for more than eighty years. The above theory, born in the solid-state field, can also be generalized to other devices where two orthogonal forces or energy gradients appear while electrical noise is being measured.

Citation Download Citation

José-Ignacio Izpura, José-Ignacio Izpura, } "The electrical origin of the 1/f electrical noise in solid-state devices and integrated circuits", Proc. SPIE 6590, VLSI Circuits and Systems III, 65901O (10 May 2007); doi: 10.1117/12.721175; https://doi.org/10.1117/12.721175

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