12 June 2007 Effect of electrodes properties on OLED performances
Author Affiliations +
Abstract
The effects induced by different electrical contacts, both for the anode and for the cathode, have been analyzed in Organic Light Emitting Diodes (OLEDs). The properties of anode electrode, Indium Tin Oxide (ITO), have been varied through different surface treatments allowing roughness control, carbon impurity removal, spikes decrement. These induce changes of ITO surface chemical-physical characteristics as roughness, surface energy and surface polarity. OLEDs manufactured employing treated ITO have showed an improvement of 25 times in luminance. Thermionic injection model has been used to estimate decrement in effective hole barrier at ITO-organic layer. It is shown that this effect is correlated to ITO surface energy. The second step of process optimization has concerned the cathode electrode investigation. In order to perform this task, Al, Ca/Al, Ag, Mg/Ag have been used to realize different ITO/PEDOT:PSS/PF6/Alq3/Metal OLEDs. Measurements of electrical and optical behaviour have been performed. A thermionic injection model, with and without Schottky barrier decrement, has been used to calculate the change of the cathode electrical barrier.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mario Petrosino, Mario Petrosino, Paolo Vacca, Paolo Vacca, Riccardo Miscioscia, Riccardo Miscioscia, Giuseppe Nenna, Giuseppe Nenna, Carla Minarini, Carla Minarini, Alfredo Rubino, Alfredo Rubino, } "Effect of electrodes properties on OLED performances", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659311 (12 June 2007); doi: 10.1117/12.722032; https://doi.org/10.1117/12.722032
PROCEEDINGS
11 PAGES


SHARE
RELATED CONTENT

The design of cathode for organic photovoltaic devices
Proceedings of SPIE (November 07 2016)
Modeling of I-V characteristics of an MEH-PPV PLED
Proceedings of SPIE (November 10 2004)
n-Type doping in organic electronic devices
Proceedings of SPIE (November 15 2010)

Back to Top