12 June 2007 The role of the temperature and aging in the photoluminescence behaviour on porous silicon stain etched films
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Abstract
The role of the aging in the photoluminescence (PL) of stain etched porous silicon (PS) layers and its behaviour at different temperatures have been studied. The photoluminescence has been measured at different temperatures showing the influence of the phonons in the intensity of the emissions and the lifetimes. Two contributions to the photoluminescence spectra have been found: one due to quantum confinement effects and the other one due to the presence of non-bridging oxygen hole centre defects. There is no evidence of energetic shifts on the maximum at different temperatures.
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B. González-Díaz, B. González-Díaz, J. Méndez-Ramos, J. Méndez-Ramos, J. del-Castillo, J. del-Castillo, B. Díaz-Herrera, B. Díaz-Herrera, R. Guerrero-Lemus, R. Guerrero-Lemus, C. Hernandez-Rodriguez, C. Hernandez-Rodriguez, V. D. Rodríguez, V. D. Rodríguez, } "The role of the temperature and aging in the photoluminescence behaviour on porous silicon stain etched films", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 65931P (12 June 2007); doi: 10.1117/12.721958; https://doi.org/10.1117/12.721958
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