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12 June 2007 High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array
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Abstract
We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 2.8 x 1011 cmHz1/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 &mgr;m and a quantum efficiency of 35 %. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 x 107 cmHz1/2/W. A 320 x 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also fabricated based on this kind of a device. The focal plane array had 34 mA/W responsivity, 1.1 % conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.
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S. Tsao, H. Lim, W. Zhang, and M. Razeghi "High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 65931U (12 June 2007); https://doi.org/10.1117/12.719691
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