12 June 2007 Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer
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Abstract
We present continuous-wave laser operation at room temperature at 1.55 μm by optically pumping a photonic crystal structure containing an InGaAs/InP quantum well active layer. The active layer is integrated onto a Silicon chip by means of Au/In bonding technology. This metallic layer provides the reduction of heating by thermal dissipation into the substrate, and increases the quality-factor by reducing the radiative losses.
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G. Vecchi, G. Vecchi, F. Raineri, F. Raineri, I. Sagnes, I. Sagnes, A. M. Yacomotti, A. M. Yacomotti, P. Monnier, P. Monnier, R. Braive, R. Braive, S. Bouchoule, S. Bouchoule, A. Levenson, A. Levenson, R. Raj, R. Raj, } "Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659322 (12 June 2007); doi: 10.1117/12.724170; https://doi.org/10.1117/12.724170
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