12 June 2007 Near-UV InGaN/GaN-based dual-operation quantum optoelectronic devices
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Abstract
We present a novel dual-operation InGaN/GaN based quantum optoelectronic device (QOD) that operates as a quantum electroabsorption modulator in reverse bias and as a light emitter in forward bias in the spectral range of near-ultraviolet (UV). Here we report the design, epitaxial growth, fabrication, and characterization of such QODs that incorporate ~2-3 nm thick InGaN/GaN quantum structures for operation between 380 nm and 400 nm. In reverse bias, our QODs show an optical absorption coefficient change of ~14000 cm-1 with a reverse bias of 9 V (corresponding to ~40 cm-1 absorption coefficient change for 1 V/&mgr;m field swing) at 385 nm, reported for the first time for InGaN/GaN quantum structures in the near-UV range. In forward bias, though, our QODs exhibit optical electroluminescence spectrum centered around 383 nm with a full width at half maximum of 20 nm and photoluminescence spectrum centered around 370 nm with a full width at half maximum of 12 nm. This dual operation makes such quantum optoelectronic devices find a wide range of optoelectronics applications both as an electroabsorption modulator and a light emitting diode (LED).
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Tuncay Ozel, Emre Sari, Sedat Nizamoglu, Hilmi Volkan Demir, "Near-UV InGaN/GaN-based dual-operation quantum optoelectronic devices", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659324 (12 June 2007); doi: 10.1117/12.721992; https://doi.org/10.1117/12.721992
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