Analytical descriptions of damage threshold of dielectric materials irradiated by femtosecond pulses

Gang Zhao; Qiulong Hao; Wenznog Qi; Jianguo Chen; Jing Zhang

doi:10.1117/12.726446

5 March 2007 Analytical descriptions of damage threshold of dielectric materials irradiated by femtosecond pulses

Gang Zhao, Qiulong Hao, Wenznog Qi, Jianguo Chen, Jing Zhang

Proceedings Volume 6595, Fundamental Problems of Optoelectronics and Microelectronics III; 65950J (2007) https://doi.org/10.1117/12.726446
Event: Fundamental Problems of Optoelectronics and Microelectronics III, 2006, Harbin, China

Abstract

For a dielectric exposure to the femtosecond hyperbolic secant pulse, the electron dominated by collisional and multiphoton ionization has been studied. Analytical description of the temporal evolution of the electron density induced by the optical pulse has been given. As the result, at the damage threshold an explicit expression of the pulse width in terms of the pulse fluence has been derived.

Citation Download Citation

Gang Zhao, Qiulong Hao, Wenznog Qi, Jianguo Chen, and Jing Zhang "Analytical descriptions of damage threshold of dielectric materials irradiated by femtosecond pulses", Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 65950J (5 March 2007); https://doi.org/10.1117/12.726446

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available