5 March 2007 Analytical descriptions of damage threshold of dielectric materials irradiated by femtosecond pulses
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Proceedings Volume 6595, Fundamental Problems of Optoelectronics and Microelectronics III; 65950J (2007) https://doi.org/10.1117/12.726446
Event: Fundamental Problems of Optoelectronics and Microelectronics III, 2006, Harbin, China
Abstract
For a dielectric exposure to the femtosecond hyperbolic secant pulse, the electron dominated by collisional and multiphoton ionization has been studied. Analytical description of the temporal evolution of the electron density induced by the optical pulse has been given. As the result, at the damage threshold an explicit expression of the pulse width in terms of the pulse fluence has been derived.
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Gang Zhao, Gang Zhao, Qiulong Hao, Qiulong Hao, Wenznog Qi, Wenznog Qi, Jianguo Chen, Jianguo Chen, Jing Zhang, Jing Zhang, } "Analytical descriptions of damage threshold of dielectric materials irradiated by femtosecond pulses", Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 65950J (5 March 2007); doi: 10.1117/12.726446; https://doi.org/10.1117/12.726446
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