Paper
5 March 2007 Thermal behavior of thin metal films irradiated by ultra-short pulse laser
Qiulong Hao, Gang Zhao, Wenzong Qi
Author Affiliations +
Proceedings Volume 6595, Fundamental Problems of Optoelectronics and Microelectronics III; 65950K (2007) https://doi.org/10.1117/12.726448
Event: Fundamental Problems of Optoelectronics and Microelectronics III, 2006, Harbin, China
Abstract
The two-temperature model has been widely used to predict the electron and phonon temperature distributions in ultra-short laser processing of metals. This paper extends the use of existing two-temperature model to high electron temperatures by using full-run quantum treatments, including the electron heat capacity, electron relaxation time and electron conductivity . A dual-hyperbolic two temperature model is solved numerically using an accurate and stabile forward-difference scheme, in which one kind of artificial viscosities and adaptive time steps method are introduced. This model predicts the damage thresholds more accurately compared with published experimental results.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qiulong Hao, Gang Zhao, and Wenzong Qi "Thermal behavior of thin metal films irradiated by ultra-short pulse laser", Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 65950K (5 March 2007); https://doi.org/10.1117/12.726448
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KEYWORDS
Pulsed laser operation

Gold

Metals

Tellurium

Quantum efficiency

Laser damage threshold

Thin films

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