5 March 2007 Pulse LDA-pumped passively Q-switched mode locked Nd:YVO4 laser with a GaAs saturable absorber
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Proceedings Volume 6595, Fundamental Problems of Optoelectronics and Microelectronics III; 659517 (2007) https://doi.org/10.1117/12.726610
Event: Fundamental Problems of Optoelectronics and Microelectronics III, 2006, Harbin, China
Abstract
A passively Q-switched pulse-LDA(laser-diode-array)-pumped Nd:YVO4 laser using As+ion-implanted GaAs as a saturable absorber is demonstrated. In the Q-switching experiment, the laser produces one Q-switching pulse in every pumping pulse duration and a Q-switching pulse width 7 ns is achieved. When the pumping power is increased a Q-switched mode-locked laser is achieved. Using a 60% initial transmission GaAs wafer, the modulation depth of larger than 95% is obtained. The repetition rate of the mode-locked pulses in the Q-switched envelope is 991MHz. The effects of the pumping pulse energy, pumping pulse width and repetition rate on the characteristics of the Q-switched mode-locked pulses are also investigated respectively. The experimental results are discussed as well in the paper.
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Xiaojuan Liu, Xiaojuan Liu, Rulian Fu, Rulian Fu, } "Pulse LDA-pumped passively Q-switched mode locked Nd:YVO4 laser with a GaAs saturable absorber", Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 659517 (5 March 2007); doi: 10.1117/12.726610; https://doi.org/10.1117/12.726610
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