Translator Disclaimer
25 January 2007 Influence of energy bands distortion on non-steady-state photo-induced electromotive force in semiconductors
Author Affiliations +
Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 65960E (2007) https://doi.org/10.1117/12.726369
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
A theory of the non-steady-state photo-induced electromotive force in bipolar semiconductors accounting for the boundary conditions in a metal-semiconductor junction and distortion of energy bands near semiconductor surface is developed. It is shown that the surface potential can change essentially both the amplitude and the phase-frequency characteristic of the photo-induced electromotive force.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aleksandr Konin "Influence of energy bands distortion on non-steady-state photo-induced electromotive force in semiconductors", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960E (25 January 2007); https://doi.org/10.1117/12.726369
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top