GaAs/AlGaAs structures with δ-doped layer for microwave detection

Algirdas Sužiedėlis; Valerij Petkun; Antoni Kozič; Viktorija Kazlauskaitė; Aurimas Čerškus; Gytis Steikūnas; Jonas Gradauskas; Jurgis Kundrotas; Steponas Ašmontas; Irina Papsujeva; Aleksandras Narkūnas; Tomas Anbinderis; Vladimir Umansky; Hadas Shtrikmann

doi:10.1117/12.726409

25 January 2007 GaAs/AlGaAs structures with &dgr;-doped layer for microwave detection

Algirdas Sužiedėlis, Valerij Petkun, Antoni Kozič, Viktorija Kazlauskaitė, Aurimas Čerškus, Gytis Steikūnas, Jonas Gradauskas, Jurgis Kundrotas, Steponas Ašmontas, Irina Papsujeva, Aleksandras Narkūnas, Tomas Anbinderis, Vladimir Umansky, Hadas Shtrikmann

Author Affiliations +

Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 65960N (2007) https://doi.org/10.1117/12.726409
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania

Abstract

Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with &dgr;-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures with &dgr;- and smoothly-distributed doping impurities in the AlGaAs barrier is presented. Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is ascertained both theoretically and experimentally. In the case of the structure with &dgr;-doping this influence was less, especially, in the case of symmetrically shaped structure with n-n⁺ and homogeneous asymmetrically shaped modulation doped structure.

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Algirdas Sužiedėlis, Valerij Petkun, Antoni Kozič, Viktorija Kazlauskaitė, Aurimas Čerškus, Gytis Steikūnas, Jonas Gradauskas, Jurgis Kundrotas, Steponas Ašmontas, Irina Papsujeva, Aleksandras Narkūnas, Tomas Anbinderis, Vladimir Umansky, and Hadas Shtrikmann "GaAs/AlGaAs structures with &dgr;-doped layer for microwave detection", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960N (25 January 2007); https://doi.org/10.1117/12.726409

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